报告错误
BF961_UNDERSIDE_MOUNT
描述：Dual gate RF MOSFET: N–Channel Dual Gate MOS-Field effect Tetrode,
Depletion Mode.
TO 50 case. Body sits in hole in PCB to mount pins flat on BOTTOM LAYER OF PCB with silkscreen on TOP LAYER.
Originally made by Vishay and possibly OnSemi (Motorola as was).
Device datasheet:
http://ronja.twibright.com/datasheets/tetrode/BF961.pdf
报告错误
属性
| 名称: | BF961_UNDERSIDE_MOUNT |
| 描述: | Dual gate RF MOSFET: N–Channel Dual Gate MOS-Field effect Tetrode, Depletion Mode. TO 50 case. Body sits in hole in PCB to mount pins flat on BOTTOM LAYER OF PCB with silkscreen on TOP LAYER. Originally made by Vishay and possibly OnSemi (Motorola as was). Device datasheet: http://ronja.twibright.com/datasheets/tetrode/BF961.pdf |
全新的交互和界面
简单易用，可快速上手